| PART |
Description |
Maker |
| 2SC3053 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SA1364 |
Low Frequency Power Amplify Applications
|
Guangdong Kexin Industrial Co.,Ltd
|
| INA5002AP1 |
For low frequency power amplify Silicon PNP Epitaxial
|
Isahaya Electronics Corporation
|
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| INC5001AP1 |
For low frequency power amplify Silicon NPN Epitaxial
|
Isahaya Electronics Corporation
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| ISA1530AC1 ISA1530AC113 ISA1603AM1 ISA1603AM113 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Corpora...
|
| 2SA2026 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INC6007AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ISC3244AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO
|
ISAHAYA[Isahaya Electronics Corporation]
ETC[ETC]
|
